Beijing RealLight Technology Co., Ltd

Beijing RealLight Technology Co., Ltd Contact information, map and directions, contact form, opening hours, services, ratings, photos, videos and announcements from Beijing RealLight Technology Co., Ltd, Electronics, 5th Floor Block F No. 1 Building, No. 139 Jinghai 3rd Road, Beijing Development Area, Mallapur.
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RealLight Technology is a high-tech enterprise specializing in the research and development, manufacture and sales of diode lasers, microchip lasers, erbium glass lasers, high-energy solid-state lasers and laser accessories.

🔬R13D-675nm|OEM Laser Module for Dermatology & Skin-Surgery Applications675 nm laser offers favorable absorption on mela...
30/09/2026

🔬R13D-675nm|OEM Laser Module for Dermatology & Skin-Surgery Applications

675 nm laser offers favorable absorption on melanin and hemoglobin, suitable for vascular lesions, pigmented lesions and skin minimally-invasive procedures with mild clinical side-effectsPMC.

RealLight R13D-675nm fibercoupled diode laser module for dermatology & aesthetic system OEM:

▪Stable high-power 675 nm output with highly uniform beam profile

▪Detachable SMA905 fiber for flexible optical layout & consumable replacement

▪Builtin PD photodetector for real-time power monitoring to guarantee repeatable treatment

▪Integrated aiming beam and thermistor for alignment and thermal protection

▪Optimized heat dissipation to minimize power drift under longduration operation

▪Replaceable dustproof window for high-frequency medicaldevice usage

Application scenarios: Dermatological surgical instruments, pigment & vascular lesion treatment systems, skin minimally-in-surgical devices.

Datasheet and sample evaluation are available for medicaldevice developers. Drop us a DM.

🌐 Learn more & request a quote: https://www.reallightlaser.com/ 📧 Contact: [email protected]

Hashtags

RealLight provides high quality diode and erbium lasers with stable performance for medical scientific and industrial applications worldwide

💡R13D-1470nm|Laser Source for Varicose Vein Minimally-Invasive Ablation & Soft -Tissue CuttingThanks to high water absor...
24/09/2026

💡R13D-1470nm|Laser Source for Varicose Vein Minimally-Invasive Ablation & Soft -Tissue Cutting

Thanks to high water absorption at 1470 nm, endovenous laser ablation (EVLA) achieves precise vein-wall treatment with less collateral thermal damage, lowering postoperation pain and bruising risk.

RealLight R13D-1470nm fiber-coupled laser module is engineered for vascular-surgery OEM devices:

▪High continuous-wave power for vein closure, soft-tissue cutting & ablation

▪Detachable SMA905 fiber for fast clinical fiber replacement

▪Built-in PD photodetector for real-time power monitoring to improve surgical safety

▪Integrated thermistor & aiming beam for system alignment & intraoperative positioning

▪Optimized thermal design for stable long-run performance in outpatient scenarios

▪Replaceable optical window for easy maintenance and longer system lifetime

Typical applications: Endovenous ablation for varicose veins, soft-tissue minimally-invasive cutting, vascular-surgical equipment development.

Custom tuning and sample evaluation available for medical device manufacturers. DM for datasheet.

🌐 Learn more & request a quote: https://www.reallightlaser.com/

📧 Contact: [email protected]



Hashtags

RealLight provides high quality diode and erbium lasers with stable performance for medical scientific and industrial applications worldwide

Photoresist Repair and Microchip Laser Applications         Value and Industry Status of Photoresist RepairIn the manufa...
21/09/2026

Photoresist Repair and Microchip Laser Applications

Value and Industry Status of Photoresist Repair

In the manufacturing of semiconductor wafers, photomasks and advanced display devices, photoresist plays a critical role in pattern transfer. Throughout spin-coating, exposure and development processes, airborne particles, minor equipment jitter and process-parameter drift can give rise to micron-scale defects including photoresist residues, local bridging and micro-notches. If such defects flow into subsequent processes such as etching and v***r deposition, device failure will directly occur. Photoresist repair adopts laser-based non-contact ablation to precisely remove local defects while preserving intact photoresist layers and underlying substrates. It avoids full-panel scrapping and remanufacturing, and serves as a vital remedial process for yield improvement and production-cost control.

Not all photoresist defects are suitable for laser repair. Microchip solid-state lasers are applicable only for localized point-like or small-block micron-scale defects that require site-specific removal with strict substrate-damage control. This solution is generally not adopted for large-area photoresist spalling or extensive damage. At present, mainstream repair light sources in the industry are conventional Q-switched nanosecond DPSS lasers and ultraviolet fiber lasers. Such equipment commonly suffers from long pulse tails and prominent thermal effects, which tend to cause photoresist carbonization and substrate burning during processing. In addition, spot consistency degrades gradually over long-time operation. Meanwhile, numerous discrete optical components lead to heavy workload for commissioning and maintenance.

Featuring short pulses, high beam quality and multi-band ultraviolet output, sub-nanosecond microchip solid-state lasers have gradually emerged as a new-generation candidate light source for photoresist repair. Their 20 kHz and 30 kHz repetition rates match the scanning rhythm of automated equipment. Microchip laser products developed by RealLight also provide domestic light-source alternatives for Chinese photoresist-repair equipment manufacturers.

Core Process Pain Points of Laser-Based Photoresist Repair

Photoresist repair belongs to high-precision micro-area processing, imposing stringent requirements on thermal suppression, spot profile, energy stability, wavelength matching and equipment integration. Multiple typical process challenges exist in mass-production lines, and microchip lasers deliver targeted solutions for these pain points:

2-1 Carbonization and Substrate Damage Induced by Thermal Effects
Conventional nanosecond lasers feature long pulse tails and broad thermal conduction ranges, generating black carbon residues at ablation sites and even burning underlying substrates. Microchip-based sub-nanosecond narrow-pulse lasers realize cold ablation dominated by photochemical decomposition, narrowing the heat-affected zone and curbing carbon-residue formation.

2-2 Repair-Profile Burrs Caused by Poor Beam Mode
Some traditional lasers contain high-order-mode components with uneven spot-energy distribution, resulting in jagged edges and over-etching on repaired areas, which fails the fine treatment of micro-defects. Microchip lasers deliver TEM₀₀ fundamental-mode Gaussian beams with uniform energy distribution, yielding sharp and neat repair boundaries.

2-3 Poor Processing Consistency from Pulse-Energy Jitter
Pulse-energy fluctuation may lead to incomplete photoresist removal in some regions and excessive etching with substrate damage in others, causing volatile batch yield. The integrated short-resonator-cavity structure of microchip lasers mitigates parameter drift caused by lens displacement, ensuring high single-pulse-energy stability and consistent performance during long-duration continuous processing.

2-4 Mismatch between Wavelength and Photoresist Absorption Characteristics
Infrared and green lasers mainly rely on thermal ablation and bring severe side effects. Through nonlinear frequency conversion, microchip lasers output 355 nm and 266 nm ultraviolet beams with high photon energy and high photoresist-absorption efficiency, enabling preferential photochemical decomposition.

2-5 Bulky Light-Source Structure Hindering Automation-Equipment Integration
Traditional ultraviolet solid-state lasers employ abundant discrete optical elements, which are complicated to commission and bulky in overall dimension, making them hard to embed into compact automated repair equipment. Microchip lasers adopt integrated crystal packaging with compact laser heads, supporting OEM integration and lowering optical-commissioning complexity for complete machines.

Basic Working Principle of Microchip Solid-State Lasers

Microchip lasers are diode-pumped passively Q-switched DPSS solid-state lasers built around monolithic integrated resonators. The gain crystal and saturable-absorber crystal are thermally bonded into a thin chip. Resonator reflective coatings are directly deposited on both end facets of the chip. The chip thickness itself defines the cavity length, eliminating a large number of discrete adjustable lenses and forming an ultra-simple plane-plane resonator.

End-pumping by semiconductor diodes injects pump light into the gain medium from crystal facets. The passively Q-switched effect compresses pulses to output sub-nanosecond short pulses with high peak power. Natural TEM₀₀ fundamental-mode output is achieved, with repetition rates covering the kHz range including typical 20 kHz and 30 kHz repair conditions. Coupled with second-, third- and fourth-harmonic nonlinear crystals, 355 nm and 266 nm ultraviolet laser outputs can be obtained. The entire optical path is pre-aligned at factory, requiring no repeated on-site adjustment, and inherently satisfies micro-area high-precision processing requirements for photoresist repair.

Core Advantages of Microchip Lasers for Photoresist Repair

Structural features of microchip lasers translate into practical process merits, well matching real-world requirements of photoresist repair for high precision, low thermal damage and mass-production compatibility. This accounts for their rapid adoption in fine-repair scenarios.

First, sub-nanosecond short pulses enable low-damage cold processing. Sub-nanosecond pulses ranging from several hundred picoseconds to 1-2 ns release energy instantaneously. Photoresist is primarily removed via photochemical dissociation and volatilization. Heat cannot diffuse to adjacent intact photoresist or underlying substrates, confining the heat-affected region to an extremely small scale. This reduces substrate oxidation and burning, suppresses carbon residues and eases post-repair cleaning workload. RealLight’s microchip light sources exhibit clean waveforms without obvious pulse tails, effectively avoiding thermally induced processing defects during site-specific removal of tiny photoresist defects.

Second, TEM₀₀ fundamental-mode beams guarantee micron-scale contour precision. The short integrated resonator inherently suppresses high-order oscillation modes and delivers pure Gaussian beams that can be focused into compact, well-defined spots. For photoresist defects of several to tens of micrometers, ablation zones can be precisely confined with sharp repair edges, free of irregular over-etching and burrs. It meets high-precision repair specifications for photomasks and wafer devices — a performance difficult for many ordinary fiber lasers to achieve.

Third, high pulse-energy stability supports continuous industrial mass production. With resonators integrated inside bonded crystal chips, risks of discrete-lens vibration and displacement are eliminated and pulse-energy jitter is minimized. Stable operation at high repetition rates of 20 kHz and 30 kHz ensures consistent output for every pulse, uniform repair results for large-batch workpieces, reduced compensation demands for vision positioning and motion stages, and stable production-line yield.

Fourth, dual ultraviolet bands flexibly adapt to diverse photoresist materials. After frequency conversion, microchip solid-state lasers deliver 355 nm and 266 nm ultraviolet outputs. The 355 nm band offers superior versatility for site-specific repair of most conventional photoresists. The 266 nm band provides higher-energy photons for enhanced photochemical-ablation efficiency against certain UV-resistant and thick-film photoresists. Process engineers can select bands flexibly according to photoresist formulation and film thickness.

Fifth, compact hermetic structure facilitates equipment integration. Diode-pumped DPSS microchip laser heads feature compact layout and fully sealed optical paths, resisting dust and ambient-temperature fluctuation. Supporting external triggering, they can interface directly with machine-vision systems and high-precision motion platforms, enabling equipment vendors to develop compact complete photoresist-repair systems. Modular light-source solutions from RealLight effectively shorten development cycles for domestic equipment manufacturers.

Nevertheless, microchip lasers have inherent limitations. Constrained by physical properties of passively Q-switched microchip crystals, maximum single-pulse energy is limited. They are more suitable for localized site-specific repair rather than large-area full photoresist stripping. Average-power scaling becomes challenging under ultra-high repetition rates, calling for parameter trade-offs according to practical processes.

Summary and Outlook

Photoresist repair constitutes an essential link for yield assurance and cost reduction in microelectronics manufacturing. Drawbacks of traditional nanosecond light sources, including severe thermal side effects and tedious commissioning, become increasingly prominent amid growing demands for finer micro-defect repair. DPSS Diode-pumped sub-nanosecond microchip solid-state lasers, with integrated microchip resonators delivering sub-nanosecond pulse width, high-quality TEM₀₀ beams, industrial-grade 20 kHz-30 kHz repetition rates and optional 355 nm / 266 nm ultraviolet bands, fill part of the light-source gap for high-precision site-specific photoresist repair.

Driven by sustained growth of China’s semiconductor and high-end display industries, domestic demand for home-grown repair equipment keeps rising. Domestic laser manufacturers represented by RealLight continuously iterate microchip-laser products to advance localization of ultraviolet microchip light sources. Future industry trends will target higher repetition rates and higher ultraviolet average power to further boost repair throughput. Meanwhile, comprehensive process-parameter databases will be built for various photoresist types and substrate materials.

Furthermore, microchip lasers will be deeply integrated with high-definition visual inspection and high-precision motion-control systems to realize full-process automation of “defect detection-positioning-laser-repair-re-inspection”. With continuous performance optimization of microchip lasers, the precision, efficiency and stability of laser-based photoresist repair will be further improved, providing solid light-source support for cost reduction and efficiency gain in China’s high-end micro-manufacturing industry.

Disclaimer: Some content in this article is sourced from the internet for the purpose of technical research and exchange. It is intended for reference and learning only. If there are any inaccuracies or academic discrepancies, please feel free to provide feedback. For copyright concerns, please contact us, and we will promptly verify and remove any infringing content.

Meet us at Laser World of Photonics India (Booth LA27)Laser World of Photonics India has emerged as the leading platform...
10/09/2026

Meet us at Laser World of Photonics India (Booth LA27)

Laser World of Photonics India has emerged as the leading platform for laser and photonics technology. Started in 2012, Laser World of Photonics India has successfully connected global and Indian suppliers to buyers in India and world over.

Started in 1973 from a collaboration between Laser World of Photonics in Munich, the world's leading platform of the laser and photonics industry and the World of Photonics Congress, Europe's largest photonics conferences, this trade fair came together bringing latest technology in the world of laser and photonics.

RealLight will bring a number of independently developed & produced high-performance lasers and laser application accessories to the exhibition. The company will display products including fiber coupled diode lasers, diode laser stacks, microchip lasers, eye-safe Erbium glass lasers, high energy solid-state laser and accessories. These products are widely used in analytical instruments, biomedical industry, radar ranging, laser processing and other fields.

Exhibition information:

*September 16 – 18, 2026

*Bangalore International Exhibition Centre (BIEC)

*Booth Number: LA27

List of on-site exhibits:

Guidance:Selection of Raman Narrow Linewidth Lasers       Challenges in Raman Applications and Wavelength SelectionRaman...
09/09/2026

Guidance:Selection of Raman Narrow Linewidth Lasers

Challenges in Raman Applications and Wavelength Selection

Raman spectroscopy is hailed as a fingerprint identifier, capable of highly discriminative detection of sample composition. However, Raman scattering intensity is only one-thousandth that of Rayleigh scattering, making it highly susceptible to interference from light source characteristics. Therefore, selecting an appropriate laser for a Raman system requires a comprehensive consideration of factors such as signal strength, fluorescence interference, spectral resolution, and equipment cost. This article aims to provide you with guidance on choosing Raman narrow-linewidth lasers and recommendations for high-quality options.

The core challenges in Raman applications are fluorescence and background noise. Raman signals are extremely weak—fluorescence can either slightly interfere with the algorithm's ability to identify true signals or completely overwhelm them. Therefore, when selecting equipment, a balance must be struck between signal strength and fluorescence interference. 785 nm is considered the "golden wavelength" for Raman detection, as it effectively avoids fluorescence from most organic compounds, although its fluorescence signal is relatively weak. 830 nm is another excellent alternative, offering a longer wavelength that further reduces fluorescence excitation. 1064 nm represents the optimal choice within the near-infrared range, significantly minimizing fluorescence induction. In practice, ultraviolet wavelengths such as 355 nm and 266 nm are also used for short-wavelength excitation in Raman spectroscopy to obtain strong Raman signals; however, sample-induced fluorescence can still obscure weak Raman peaks, leading to loss of material characteristics.

The Role of Spectral Line Width and Purity

Spectral line width and spectral purity are the core indicators for ensuring the repeatability and accuracy of spectral data. The narrower the line width, the more precise the identification of Raman characteristic peaks, and the less likely the loss of characteristic signals. For industrial-grade routine detection, it is recommended to use lasers with a line width of less than 0.2nm. Under this condition, the laser is sufficient to excite most of the organic substance characteristic peaks. The edge-mode suppression ratio is also a very important indicator. In applications, a higher edge-mode suppression ratio can effectively prevent stray light from masking weak signals. In addition, wavelength drift and power stability are two other important indicators. The direct consequence of wavelength drift is the shift of spectral peak positions, while power fluctuation directly affects the intensity of spectral peaks, and both of them also affect the comparability of data.

RealLight NL Series Laser Solutions

In 2014, RealLight launched the NL series narrow linewidth diode laser modules. This series has undergone multiple iterations and market validation over a period of more than ten years and has been recognized by many leading companies in the field of spectral application technologies both at home and abroad. The NL series covers common wavelengths ranging from 532nm to 1064nm, with a continuous output power of up to 1.2 watts. The central wavelength error is less than ±0.5nm, the spectral linewidth is less than 0.1nm, the wavelength temperature drift does not exceed 7pm/℃, and it also has excellent edge-mode suppression ratio. It can be regarded as the hexagonal warrior in Raman narrow linewidth lasers! We offer various packaging forms to fully meet the various structural requirements of handheld Raman equipment or desktop Raman equipment. We can also provide a matching power supply control system, OEM modules, and Raman probe accessories. We are looking forward to becoming your partner and using laser technology to create value for you.

RealLight NL series narrow linewidth diode laser modules

Disclaimer: Some of the content in this article is sourced from the internet. It is intended for technical research and exchange purposes only, and is provided for the reference and learning of all. If there are any inaccuracies in the description or any academic inappropriacies, please feel free to raise them in a timely manner. If there are copyright issues, please contact us and we will verify and remove them as soon as possible.

27/08/2026
Struggling with Raman fluorescence background? How can SERDS technology help?1. Raman SpectroscopyIn 1928, Indian physic...
27/08/2026

Struggling with Raman fluorescence background? How can SERDS technology help?
1. Raman Spectroscopy

In 1928, Indian physicist C.V. Raman discovered the Raman scattering effect. He found in experiments that when monochromatic light (typically laser light) irradiates a substance, photons undergo elastic collisions with molecules. This portion of scattered light has the same wavelength as the incident light and provides no useful information; this is called Rayleigh scattering. When photons undergo inelastic collisions with molecules, the wavelength of the scattered light changes relative to the incident light. This phenomenon is known as Raman scattering[1].

Figure 1. Schematic diagram of light scattering.

Figure 2. Energy-level diagram of Rayleigh and Raman scattering.

Raman scattered light is symmetrically distributed on both sides of Rayleigh scattered light, but its intensity is much lower than that of Rayleigh scattering, approximately 10⁻⁶ to 10⁻⁹ of the Rayleigh scattering intensity.

Figure 3. Schematic diagram of Raman peak parameter analysis.

A Raman spectrum consists of a certain number of Raman peaks, each representing the wavelength position and intensity of the corresponding Raman scattering. Each peak corresponds to a specific molecular bond vibration, such as C–C, C=C, C–H, etc., and also includes vibrations of groups composed of multiple chemical bonds.

Through molecular bond vibrations, the composition of a substance can be analyzed; changes in Raman peak positions can be used to determine some mechanical properties of the material under study; the intensity of Raman peaks reflects the total amount of the substance; the width of Raman peaks can indicate crystal quality; and the polarization of Raman peaks reflects the symmetry and orientation of crystals.

Generally speaking, Raman spectroscopy is a unique chemical fingerprint for specific molecules or materials, enabling rapid confirmation of material types as well as differentiation between different materials. Raman spectral databases contain thousands of spectra; through rapid searching, spectral data matching the substance being analyzed can be found.

2. Shifted Excitation Raman Difference Spectroscopy (SERDS)

When a sample is irradiated with laser light, Raman scattering can be excited, but fluorescence is also excited simultaneously. The intensity of Raman scattering is very weak, while the intensity of fluorescence is 106 to 108 times that of Raman scattered light. Therefore, fluorescence greatly affects the accuracy of Raman detection [2].

Fluorescence suppression methods and techniques are therefore particularly important. Currently commonly used fluorescence suppression methods mainly include fluorescence quencher methods, photobleaching methods, infrared/ultraviolet excitation methods, wavelet transform methods, polarization modulation methods, gating methods, etc. However, these methods all have more or less drawbacks. For example, the fluorescence quencher method introduces chemical substances that may cause sample contamination; the photobleaching method, through continuous irradiation of the sample, may cause photodamage/thermal damage to the sample, and so on.

Scientists have discovered another method: Shifted Excitation Raman Difference Spectroscopy (SERDS). SERDS uses two lasers with closely spaced wavelengths to excite the sample separately. According to Kasha's rule, small energy changes in excitation photons do not affect the fluorescence background, but they cause a shift in the Raman spectrum [3]. The Raman spectrum changes with the laser wavelength, while fluorescence barely changes with wavelength. By subtracting the spectra obtained after excitation with two closely spaced wavelengths, the resulting difference spectrum has its fluorescence background almost completely eliminated.

Figure 4. Left: Raman spectrum of a 784/785 nm dual-wavelength laser (schematic). Right: Raman spectrum after difference processing (schematic).

Comparing SERDS with the several fluorescence elimination methods mentioned above, SERDS is a non-destructive, chemically contact-free method that requires no sample pretreatment. It does not cause deviations in experimental data due to the polarization characteristics of the sample, and the analysis speed is also faster.

3. Applications of SERDS

SERDS has wide applications in fields such as chemistry, medicine, food, and environmental science. At the same time, SERDS can be used in combination with other spectroscopic techniques, such as Surface-Enhanced Raman Spectroscopy (SERS), Raman microscopy, Raman spectral imaging, etc.

In the environmental and food fields, samples often have strong fluorescence backgrounds, which greatly affects sample measurement. Measuring soil fertility indicators is of great significance to agriculture. Applying different fertilizers and pesticides according to different soil fertilities can greatly increase yield and also contribute to environmental protection to a certain extent. Kay Sowoidnich et al. used a 784/785 nm dual-wavelength laser to eliminate fluorescence interference in soil measurements and separate molecular fingerprint signals of minerals such as quartz and calcite from organic molecules [4]. At the same time, Sowoidnich K et al. used a 784/785 nm dual-wavelength laser to measure the molecular fingerprints of various components in livestock and poultry feed, selecting the most suitable feed for livestock and poultry to achieve optimal production performance and condition [5].

The 784.6 nm / 785.2 nm dual-wavelength SERDS system used by the Sowoidnich team employs an electronically controlled alternating modulation method. The experiment uses a λ₁ single-exposure – λ₂ single-exposure cyclic alternating acquisition scheme to avoid fluorescence drift and photobleaching caused by batch acquisition. The time interval between adjacent wavelength acquisitions is controlled within tens of milliseconds (20–100 ms), ensuring that the fluorescence baselines of the two measurements are approximately consistent.

4. Advantages of 784/785 nm Lasers for SERDS

Raman peaks change with the excitation wavelength, while fluorescence barely changes. Therefore, choosing lasers with closely spaced wavelengths at 784/785 nm can more clearly remove fluorescence interference, while not causing the Raman peak difference to be too low (which would prevent effective differencing) due to too small a wavelength difference, nor causing changes in the fluorescence spectrum due to too large a wavelength difference. Compared with lasers of other wavelength bands, the photon energy around 785 nm is lower, which reduces the total amount of fluorescence excited from the sample, facilitating difference calculations. At the same time, the wavelength of Raman light after 785 nm scattering is in the range of 830–1010 nm, which allows the use of cheaper silicon CCD acquisition equipment.

RealLight independently develops a full set of domestically produced Raman spectroscopy optical equipment, which can be used to build complete Raman analysis platforms. Its product portfolio covers NLSO single-mode and NLMO multi-mode conventional narrow-linewidth Raman laser modules, the dual-wavelength lasers developed for Shifted Excitation Raman Difference Spectroscopy (SERDS) technology, as well as supporting RL-RP series standardized Raman collection probe dedicated heat dissipation modules and customized filter optical accessories.

Figure 5. Schematic diagram of Raman probe structure.

Figure 6. RealLight standard Raman Probe parameters.

According to different application scenarios, this series provides two product forms: NLM series benchtop lasers and NLMO series embedded laser modules. Both have the same core optical performance, covering seven mainstream excitation bands: 532 nm, 638 nm, 785 nm, 808 nm, 830 nm, 981 nm, and 1064 nm. Using 105 μm / 0.22 NA fiber output, the output power range is 100–800 mW. Except for the 808 nm and 981 nm bands with linewidth < 0.3 nm, all other bands have spectral linewidth < 0.1 nm; wavelength stability is better than ±7 pm under 4 hours of continuous operation (±5 pm for 532 nm), power peak-to-peak fluctuation < ±2%, and side mode suppression ratio (SMSR) up to 40 dB or higher.

Figure 7. NLMO series multi-mode narrow-linewidth laser module and parameter table.

The NLM series is a benchtop complete machine form, equipped with a display screen, circuit system, heat dissipation module, and hardware emergency stop switch, supporting USB communication and 0–5 V analog modulation, suitable for laboratory benchtop Raman systems and industrial online detection equipment. The NLMO series is a miniature integrated module with typical power consumption < 5 W, suitable for integrated development of portable Raman equipment and OEM batch supporting.

Figure 8. NLM series multi-mode narrow-linewidth laser and parameter table.

Conventional single-wavelength lasers use VBG (Volume Bragg Grating) frequency-locking technology, featuring narrow output spectral linewidth and excellent long-term stability of wavelength and output power. They are suitable for conventional Raman qualitative characterization of samples with weak fluorescence interference, such as minerals and chemical raw materials. For complex systems such as soil and biological matrices that have strong autofluorescence and where conventional Raman signals are easily masked, the 784.5/785.5 nm dual-wavelength narrow-linewidth semiconductor laser module launched by RealLight provides the core excitation unit for SERDS detection solutions. The device integrates two independent constant-temperature frequency-locking optical paths within a single chassis, fully meeting the physical requirements of SERDS difference operations. The two laser channels support millisecond-level electronically controlled alternating switching, with switching delay controlled within 5 ms, achieving up to 100 Hz square-wave timing modulation, and are equipped with a hardware synchronization trigger interface that can achieve signal linkage with cooled CCD spectrometers and motorized XY translation stages. Using a short-interval cyclic acquisition mode to complete Raman data acquisition at two wavelengths, it effectively reduces the difference artifact peak interference caused by photobleaching of soil organic matter and fluorescence baseline drift during batch acquisition, improving data stability.

Figure 9. 784.5/785.5 nm laser physical image, parameter table, and measured spectrum.

This dual-wavelength series also provides two forms: benchtop complete machine (NLM dual-wavelength) and embedded module (NLMO dual-wavelength). The NLM dual-wavelength is equipped with a display screen, circuit system, heat dissipation module, and hardware emergency stop switch, suitable for laboratory benchtop SERDS system construction; the NLMO dual-wavelength module has typical power consumption < 5 W, suitable for portable differential Raman equipment integration.

Figure 10. NLMO series multi-mode dual-wavelength narrow-linewidth laser module and parameter table.

Figure 11. NLM series multi-mode dual-wavelength narrow-linewidth laser and parameter table.

Combining this dual-wavelength light source with the RL-RP series high-OD Raman probe and supporting isolation filter devices, a domestically produced SERDS difference Raman detection system can be constructed. The entire optical platform can perform millimeter-scale grid scanning tests on farmland surface soil. Through difference algorithms, the broad fluorescence background generated by humus is removed, completely separating the characteristic Raman peaks of typical soil components such as quartz, feldspar, calcite, anatase, and amorphous carbon. The entire set of equipment is independently manufactured domestically. Compared with imported dual-wavelength SERDS optical systems of the same type, it has shorter procurement cycles, lower post-maintenance costs, and hardware parameters that can be flexibly customized for different usage scenarios such as laboratory benchtop analysis and field portable in-situ screening, providing reliable domestic hardware support for SERDS technology research.

Disclaimer: Part of the content in this article comes from the Internet, for the purpose of technical research and exchange, and is for reference and study only. If there are errors in description or academic inaccuracies, please feel free to raise them in a timely manner. If copyright issues are involved, please contact us and we will verify and delete the content as soon as possible.

References

[1] Raman C V. A new radiation[J]. Indian Journal of Physics, 1928, 2: 387-398.

[2] Liu Y L, Mou T T, Chen S H. Review of research progress in shifted excitation Raman difference spectroscopy [J]. Laser & Optoelectronics Progress, 2024, 61(9): 0900003. DOI: 10.3788/LOP231206

[3] Lin J Y, Lin D, Qiu S F, et al. Shifted-excitation Raman difference spectroscopy for improving in vivo detection of nasopharyngeal carcinoma[J]. Talanta, 2023, 257: 124330.

[4] Sowoidnich K, Vogel S, Maiwald M, et al. Determination of Soil Constituents Using Shifted Excitation Raman Difference Spectroscopy[J]. Applied Spectroscopy, 2022, 76(6): 712-722. DOI: 10.1177/00037028211064907.

[5] Sowoidnich K, Oster M, Wimmers K, et al. Shifted excitation Raman difference spectroscopy as enabling technique for the analysis of animal feedstuff[J]. Journal of Raman Spectroscopy, 2021, 52(8): 1418-1427. DOI: 10.1002/jrs.6140.

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Mallapur

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