22/05/2026
🚀 We specialize in high‑reliability, high‑efficiency power semiconductor devices. Our latest focus: OBC ultra‑fast chargers – already shipping to leading industry players.
Below are key components used in our solutions, with detailed specs:
🔹 PFC switching MOSFET
TO‑247‑3L 12ea 60R019B SJMOS – 600V, 115A, 18.6mΩ
🔹 SiC diode
TO‑247‑2L 12ea 3D40120H SiC SBD – 1200V, 40A
🔹 LLC switching MOSFET
TO‑247‑4L 8ea 3M35120Q SiC MOS – 1200V, 50A, 33mΩ
🔹 SiC diode
TO‑247‑2L 2ea 3D20120H SiC SBD – 1200V, 20A
🔹 Rectifier diode
TO‑247‑2L 16ea 3D40120H SiC SBD – 1200V, 40A
🔹 Gate driver MOSFET
DFN3×3 4ea 210P03TL9 Si P‑MOS – -30V, -15A, 24mΩ
🔹 IGBT
TO‑247‑3L 4ea GW75N65EX7 – 75A, 650V
🔹 Anti‑reverse diode (MUR)
TO‑247‑2L 4ea DSI90H160 GPP parallel – 1600V, 45A × 2
🔹 Output discharge MOSFET
TO‑220F‑3L 1ea 4N150F VDMOS – 1500V, 4A, 5.0Ω
🔹 Auxiliary power switching MOSFET
TO‑220F‑3L 2ea 9N90F VDMOS – 900V, 9A, 1.1Ω
🔹 Auxiliary power rectifier (SKY)
TO‑252‑2L 2ea MBR20100DCT SKY – 100V, 10A × 2
💡 Built for efficiency, thermal performance, and system reliability – perfect for next‑gen OBC and ultra‑fast charging applications.
Let’s connect if you’re looking to accelerate your EV charging designs! ⚡🔋