Global TCAD Solutions

08/09/2026

Design-Technology Co-Optimization: Physical Accuracy That Scales to the Circuit Level: Zlatan and Franz are at the GTS booth all week – come talk device simulation!

ESSERC 2026 – September 7–10, Palma de Mallorca.

8. September 2026 Recent Advances in TCAD. ESSERC 2026 – GTS Booth with Franz and Zlatan What links quantum transport, AI surrogate models, 3D NAND, cryogenic CMOS, and DTCO? They were all on the program of workshop W6 at ESSERC 2026, chaired by our CTO Zlatan Stanojević – and the session is no...

04/09/2026

ESSERC 2026 is coming up – September 7–10, Palma de Mallorca.

At GTS, we don't send sales reps to conferences. We send scientists. This time it's Franz Schanovsky (Director of Device Simulation) and Zlatan Stanojevic (CTO).

Put them on your most wanted list. Find them. Talk to them.

Check out their publication records here:

Franz Schanovsky: https://scholar.google.at/citations?user=ALk8ozQAAAAJ&hl=de&oi=sra

Zlatan Stanojevic: https://scholar.google.at/citations?user=HbbR3jsAAAAJ&hl=de&oi=sra

Conference program: https://www.esserc2026.org/w6
More information about GTS: https://www.globaltcad.com

18/08/2026

In this recently published paper, fully titled Performance Degradation Mechanisms in p-Type Nanosheet FETs: Role of Source/DrainDoping, Stress, and Inner Spacer Interface Traps, GTS scientist Ricky Hung and co-authors investigate the main performance degradation mechanisms in 2 nm-node p-type nanosheet FETs with embedded SiGe S/D epitaxy.

Follow the link for the full article:

https://www.globaltcad.com/performance-degradation-mechanisms-in-p-type-nanosheet-fets-role-of-source-draindoping-stress-and-inner-spacer-interface-traps/

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05/08/2026

Two GTS scientists, one workshop, and half a day of TCAD in Palma de Mallorca.

Global TCAD Solutions will be at ESSERC 2026, the 52nd IEEE European Solid-State Electronics Research Conference, taking place September 7–10 in Palma de Mallorca, Spain.

Our CTO Zlatan Stanojević is chairing the workshop "Recent Advances in TCAD" on Monday, September 7 – a curated look at where TCAD is heading, from quantum transport methods entering industrial workflows to AI-driven surrogate modeling and cryogenic device simulation.

Franz Schanovsky, our Director of Device Simulation, joins the speaker lineup with a session on Design-Technology Co-Optimization – and how physical accuracy scales to the circuit level.

Details to follow as the event approaches.

Conference: https://www.esserc2026.org
Workshop: https://www.esserc2026.org/w6
Homepage: https://www.globaltcad.com

29/07/2026

Day 2 at DAC 2026:

While my colleagues Xaver Klemenschits, Bonny Dongre, and Florian Ellinger are at DAC, here at GTS headquarters in Vienna, Austria (about 10.000 km away as the crow flies), I can only imagine what it must feel like to be there – meeting so many gifted and inspiring people, talking with peers from all over the world about the frontier of semiconductor design and development. Fortunately for me, they have been sending me some images to let me glimpse a bit of the ambience.

If you are currently at DAC, go find my colleagues at our Booth 763 and tell them "Christian says hi."

Not at DAC , but want to know more about GTS? Go to https://www.globaltcad.com

28/07/2026

Day one at DAC 2026 in Long Beach is behind us, and the conversations at the booth were a good reminder of why we make the trip.

Two days to go. If you already know us, stop by and say hello. If you don't, come and find out what physics-based TCAD can do for your device and technology development – from process emulation through device simulation to DTCO at the cell level.

You will be talking directly to the scientists who develop the software, and only through Wednesday.

Booth 763, Long Beach Convention Center.

24/07/2026

Bags are packed – the GTS team is counting down the days to DAC 2026 in Long Beach. Booth 763, exhibit hall open July 27–29.

Our main topic this year: AI for DTCO.

Underneath it, the tools you rely on every day. GTS ProSim – our physical fabrication simulator for Si and SiGe – and GTS ProEmu have improved performance with our latest release, with the priorities you expect from us: precision, reliability, and compatibility with your existing setups and results.

Our ecosystem is designed to interface with your systems as well as with other vendors' tools. One example of the latter is our cooperation with GenChip, pairing AI-driven standard-cell optimization with physics-based performance evaluation.

Stop by booth 763 to discuss your daily simulation needs or your next technology decision with our team – Xaver Klemenschits, Florian Ellinger, and Bonny Dongre.

Conference details: https://dac.com/2026
More on GTS: https://lnkd.in/dwi7qvux
More on GenChip: https://www.genchip.com/

09/07/2026

Meet Global TCAD Solutions (GTS) at DAC 2026 in Long Beach – booth 763, exhibit hall open July 27–29.

As the industry transitions to next-gen cell architectures like GAA and CFET, together with advanced design principles such as backside power delivery and optimized MOL interconnects, the technology foundation underneath every cell matters more than ever.

That is where GTS comes in, targeting the high-performance logic driving tomorrow's AI applications.

Xaver Klemenschits, Bonny Dongre, and Florian Ellinger will be at the booth to talk about DTCO built on TCAD:

• PPA optimization at the intersection of process technology and cell-level design
• RO and SRAM benchmarks, up to full standard-cell library optimization
• Process-aware path-finding with GTS ProSim: MC and analytical implant, anneal, physical oxidation, mechanical stress
• Predictive advanced transport simulations for nanoscale logic

All within our latest GTS Framework release (2026.03), with faster anneal/diffusion simulation, improved MC implantation, and updates across Minimos-NT and GTS Vision.

Stop by booth 763 to find out where our complete TCAD solution fits into your design flow.

Conference details: https://dac.com/2026
More on GTS: https://www.globaltcad.com

12/05/2026

Global TCAD Solutions at the IEEE International Memory Workshop 2026

Our colleague Franz Schanovsky, Director Device Simulation at Global TCAD Solutions, is in Leuven this week for the 18th IEEE International Memory Workshop. The event brings together the global memory community, covering everything from established technologies in volume production to early-stage research on next-generation concepts.

Memory is not a new topic for us at Global TCAD Solutions. We have been supporting the memory sector for years, with TCAD models for charge-trapping flash and ferroelectric memory among our capabilities. Franz is at IMW to see where the field is heading and to explore how we can get even more involved – and, of course, to meet the people shaping the future of memory technology.

We are always keen to expand our connections in this space. If you are attending IMW 2026, feel free to reach out to Franz.

20/04/2026

Our en­gi­neers just re­turned from VLSI-TSA in Tai­wan, and the con­sen­sus is unan­i­mous: what a fan­tas­tic event! The con­fer­ence show­cased fas­ci­nat­ing top­ics across VLSI tech­nol­o­gy and sys­tem ap­pli­ca­tions, and we had the plea­sure of con­nect­ing with many in­ter­est­ing peo­ple from across the semi­con­duc­tor com­mu­ni­ty. The tech­ni­cal dis­cus­sions were ex­cel­lent, the net­work­ing op­por­tu­ni­ties were in­valu­able, and – we must men­tion – the food was out­stand­ing! Spe­cial thanks to Har­ri­et Chiu (邱秀雲) for her in­valu­able as­sis­tance with our spon­sor­ship. Thank you to the or­ga­niz­ers and all the par­tic­i­pants for mak­ing this such a mem­o­rable ex­pe­ri­ence. We look for­ward to con­tin­u­ing the con­ver­sa­tions and col­lab­o­ra­tions that start­ed in Tai­wan.

Learn more about GTS: https://www.globaltcad.com/

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