Shenzhen Baoquan Zhijie Technology Co., Ltd.

16/07/2026

Choosing the right IGBT module package involves much more than matching voltage and current ratings.

Package type can directly affect thermal performance, mechanical compatibility, power density, reliability and total system cost.

In this new edition of **QT Power Semiconductor Engineering Insights**, we explain:

• The difference between package and topology
• Common IGBT module packages such as EasyPACK, EconoPIM, Econo, 34 mm, 45 mm, 62 mm, SOT-227 and EconoDual
• How to select the right package for VFDs, UPS systems, solar inverters, ESS, welding machines and EV chargers
• Five common package-selection mistakes engineers should avoid

Read the full article and share which IGBT module package your team is currently using.

How to Select the Right IGBT Module Package for Your Application Choosing the right IGBT module package is not simply a matter of finding a device with the correct voltage and current rating. The package affects thermal performance, electrical inductance, mechanical installation, power density, syst

17/06/2026

How to Choose the Right IGBT Module for Variable Frequency Drives?
In VFD applications, the IGBT module is one of the key components that directly affects system efficiency, thermal performance, and long-term reliability.
For VFD manufacturers, selecting the right IGBT module is not only about voltage and current rating.
Engineers should also consider:
• DC bus voltage margin
• Output current and overload capacity
• Switching frequency
• Conduction loss and switching loss
• Thermal resistance and heat sink design
• Package compatibility
• Short-circuit withstand capability
• Long-term supply stability
For many 380V/400V industrial VFD systems, 1200V IGBT modules are commonly used because they provide enough voltage margin for transient spikes and demanding motor drive conditions.
A reliable IGBT module can help improve efficiency, reduce failure risk, and extend VFD service life.
If you are working on VFD, motor drive, pump, fan, compressor, or HVAC applications, I would be glad to support your IGBT module selection.
Modules mosfet diode semiconductor module discrete Modules Recovery Diode Modules components #3 phase power -tech zhijie

drive Frequency Drives Drive converter inverter vehicles supply discrete voltage inverter energy charger -state repay soft starter Innovation device machine device heating cook storage water heater storage power compensation regulator

14/04/2026

IGBT Passivation Function: Materials, Longevity, and Efficiency

In power electronics, the Insulated Gate Bipolar Transistor (IGBT) has become one of the most important semiconductor devices for high-voltage and high-current switching. It is widely used in electric vehicles, renewable energy inverters, industrial motor drives, and high-voltage transmission systems. While much attention is given to switching speed, thermal performance, and current ratings, one often overlooked but crucial factor is the IGBT passivation function.

Passivation not only protects the device from environmental damage but also ensures electrical stability and long-term reliability. This article explains what the IGBT passivation function is, the materials used, and why it plays such a decisive role in the longevity and efficiency of IGBTs.

What Does Passivation Mean in IGBTs?
Passivation refers to the process of applying a protective insulating layer on the semiconductor surface. In IGBTs, this passivation layer serves multiple purposes:

Electrical Insulation – prevents surface leakage currents and unintentional conduction.

Environmental Protection – shields the IGBT surface from moisture, dust, and chemical contamination.

Charge Stabilization – reduces surface charge accumulation, ensuring predictable threshold voltage and stable switching.

Mechanical Stress Relief – protects against micro-cracks caused by thermal expansion and contraction during high-power cycles.

In short, the IGBT passivation function is vital for device durability and efficient performance, particularly under high-stress operating conditions.

Passivation Materials in IGBT Technology
The effectiveness of passivation depends heavily on the choice of materials. Each material has unique properties that make it suitable for different environments and performance requirements .

Silicon Dioxide (SiO₂):
One of the earliest passivation materials, SiO₂ provides good insulation but is less resistant to humidity and mechanical stress.

Silicon Nitride (Si₃N₄):
Widely used due to its excellent moisture resistance, mechanical strength, and thermal stability. It helps maintain breakdown voltage in high-humidity environments.

Polyimide:
Known for high flexibility and excellent thermal stability, polyimide passivation is increasingly used in high-power IGBTs, especially where thermal cycling is frequent.

Epoxy Resin:
Provides mechanical reinforcement and chemical resistance but may degrade under extreme temperatures.

Glass Layers:
Applied for high-voltage insulation and robust environmental protection, particularly in industrial and grid-level applications.

The choice of passivation material directly influences the reliability, efficiency, and lifetime of the IGBT.

Advanced Passivation Techniques
As IGBT technology evolves, advanced passivation methods are being adopted:

Chemical V***r Deposition (CVD): Produces high-quality, uniform insulating films with strong adhesion.

Plasma-Enhanced CVD (PECVD): Allows lower-temperature deposition, suitable for delicate semiconductor structures.

Atomic Layer Deposition (ALD): Provides precise nanoscale thickness control for uniform coverage, enhancing breakdown voltage.

Nanocoatings: Ultra-thin protective films that improve resistance to corrosion and contamination.

Self-Healing Passivation Layers: Emerging research focuses on materials that can automatically repair micro-cracks, further extending IGBT lifespan.

These techniques highlight how the passivation function continues to evolve, enabling IGBTs to operate in harsher environments while maintaining efficiency.

Why Passivation is Critical for Efficiency and Longevity
The IGBT passivation function directly impacts both performance and durability:

Higher Efficiency: Stable passivation reduces leakage currents, ensuring minimal energy loss.

Enhanced Reliability: Devices resist degradation from moisture, dust, and chemical exposure.

Extended Lifetime: Passivation materials help devices survive repeated thermal cycles, a common stress in EVs and industrial drives.

Improved Safety: Prevents premature breakdown at high voltages, reducing failure risks in power-critical systems.

Real-World Applications
Electric Vehicles (EVs): Passivation ensures IGBTs in inverters can withstand high switching frequencies and temperature cycles.

Renewable Energy: Solar inverters and wind turbines rely on robust passivation to resist outdoor conditions.

Industrial Drives: Continuous operation under mechanical vibration and dust exposure demands strong passivation layers.

Power Grids: HVDC systems depend on passivated IGBTs to handle high voltage stresses with minimal energy loss.

Conclusion
IGBT passivation function is more than a protective coating—it is a critical enabler of performance, efficiency, and reliability in modern power electronics. By carefully selecting materials such as silicon nitride, polyimide, or glass, and employing advanced deposition techniques like ALD or PECVD, manufacturers can significantly extend the lifespan and stability of IGBT modules.

As industries move toward higher power density and more demanding applications, the importance of robust passivation will continue to grow. For engineers and system designers, understanding how passivation influences IGBT performance is essential for building efficient and reliable power systems.

For more industrial information,pls check our below website FYI,
https://www.qtech-power.com/

02/03/2026

Recently, prices for core metal materials at the upstream end of the global semiconductor supply chain have experienced significant volatility. Key raw materials such as copper, silver, and tin have seen substantial price increases, driving sustained cost pressures across wafer manufacturing, packaging, and testing processes. Against this industry backdrop, multiple domestic and international power semiconductor companies have successively issued price increase notices, adjusting product pricing to address mounting comprehensive cost pressures.
I. International Giants Take the Lead: Vishay-Siliconix Raises Prices for MOSFETs and ICs
As a globally renowned semiconductor manufacturer, Vishay-Siliconix issued a price adjustment notice to its customers on February 12, 2026. The company stated that despite efforts over recent months to maintain stable product pricing through internal cost absorption, the persistent rise in critical raw material costs to unsustainable levels necessitates an urgent price adjustment for its MOSFET and IC product lines. This action is taken to safeguard product quality, supply stability, and service levels. Vishay emphasized in the letter that this pricing decision was not taken lightly. The company consistently prioritizes customer cost visibility and planning needs, delaying the price adjustment as long as possible. Concurrently, Vishay commits that product quality and reliability standards will not be compromised by the price increase and pledges continued support to assist customers in managing operational impacts resulting from the price changes.

Global giants including TI, ADI, Yageo, Fenghua High-Tech, TE Connectivity, ROHM, and Micron have all suit with price hikes from the end of 2025 on. Price hikes have generally reached 5%-30%, with scarce categories seeing increases exceeding 100% – effectively doubling in price! The global semiconductor industry has formally entered a cost-driven, comprehensive price-increase cycle, heralding a profound restructuring of the industry landscape.
mosfet Wafer diode vehicles semiconductor module drive supply module energy charger components
discrete voltage Modules
Innovation device machine device driver heating cook storage
Modules Recovery Diode
Frequency Drives Modules

26/11/2025

IGBT & IPM Modules – Driving the Future of Industrial Automation
IGBT single devices and IPM modules play a critical role in modern industrial systems — powering high-efficiency pumps, industrial ventilation systems, and permanent magnet synchronous motors. These components form the core power infrastructure behind today’s intelligent manufacturing upgrades.
With the rapid growth of industrial automation, the demand for high-reliability IGBT and module products continues to rise. Industrial equipment typically requires higher power ratings, stronger thermal capability, and integrated protection — which is why high-power IGBTs and advanced IPM modules are becoming the preferred choice across the industry.
💡 Why IGBT & IPM matter for industrial systems
✔ High power density — Enables compact yet powerful system designs
✔ Superior thermal performance — Essential for long operation cycles
✔ Built-in protection features — Over-temperature, over-current, under-voltage, short-circuit protection
✔ Strong EMI/ESD immunity — Ensures stable system operation even in harsh environments
For industrial applications, IPM modules combining advanced packaging and intelligent protection provide a balanced solution of efficiency, stability, and long-term reliability — making them increasingly recognized and adopted in global industrial markets.
The era of smart factories is accelerating — and IGBT & IPM technologies are at the heart of this transformation. 🚀


module vehicles semiconductor module

supply storage

module energy charger machine

device driver heating cook

components

discrete voltage Modules

Innovation device Wafer diode

Modules Recovery Diode

Frequency Drives Modules

15/10/2025

Are MOSFETs and CMOS Same? Key Differences Explained

When you encounter electronic devices and circuits, do you ever wonder: are MOSFET and CMOS the same?
While both terms are closely related to semiconductor technology, they are not the same thing. In fact, MOSFET is a type of transistor device, on the other hand, CMOS refers to a technology built upon MOSFETs.

What is a MOSFET?
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is one of the most important and widely used components in modern electronics. At its core, it acts like a tiny switch that controls the flow of current in a circuit. Unlike older mechanical switches that rely on physical movement, a MOSFET uses an electric field to regulate charge flow. This makes it much faster, more efficient, and more reliable.

What is CMOS?
CMOS stands for Complementary Metal-Oxide-Semiconductor. Unlike a single MOSFET, CMOS is a technology that uses a pair of MOSFETs (one NMOS and one PMOS) working together.

Key Differences Between MOSFET and CMOS
FeatureMOSFETCMOSDefinitionA single transistor deviceA technology using pairs of MOSFETsTypeCan be NMOS or PMOSAlways involves both NMOS and PMOSRoleSwitch or amplifierPower-efficient logic and digital circuitsPower ConsumptionDepends on configurationVery low, especially in static stateApplicationsPower electronics, analog circuits, switchingMicroprocessors, memory, logic gates

So, are MOSFETs and CMOS same?
Absolutely not. MOSFETs are the basic transistor devices, while CMOS is a technology that arranges NMOS and PMOS transistors in complementary pairs to achieve power-efficient digital logic.
Understanding this distinction is essential in electronics, whether you are designing circuits, studying semiconductors, or simply curious about how modern chips function. Next time you see the terms MOSFET and CMOS, you’ll know that one is a building block and the other is a technology built from those blocks.